ds31218 rev. 2 ? 2 1 of 4 www.diodes.com dzt5401 ? diodes incorporated dzt5401 pnp surface moun t transistor features ? epitaxial planar die construction ? complementar y npn type available (dzt5551) ? ideally suited for automated assembly processes ? ideal for medium power switching or amplification applications ? lead free by design/rohs compliant (note 1) ? "gree n" device (note 3) mechanical data ? case: sot-223 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity : level 1 per j-std-020c ? terminals: finish - matte ti n a nnealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? terminal conn ections: see diagram ? marking & t ype code information: see page 3 ? orde ring information: see page 3 ? weight: 0.112 gr ams (approximate) 2 3 4 1 new product sot-223 3 1 2,4 base collector emitte r 4 3 2 1 c c b e top view schematic and pin configuration maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5.0 v collector current i c -600 ma thermal characteristics characteristic symbol value unit power dissipation @t a = 25c (note 3) p d 1 w thermal resistance, junction to ambient @t a = 25c (note 3) r ja 125 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min max unit test c ondition off characteristics (note 4) collector-base breakdown voltage v (br)cbo -160 ? v i c = -100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -150 ? v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.0 ? v i e = -10 a, i c = 0 collector cutoff current i cbo ? -50 na a v cb = -120v, i e = 0 v cb = -120v, i e = 0, t a = 150 c emitter cutoff current i ebo ? -50 na v eb = -3.0v, i c = 0 on characteristics (note 4) dc current gain h fe 50 60 50 ? 240 ? ? i c = -1.0ma, v ce = -5.0v i c = -10ma, v ce = -5.0v i c = -50ma, v ce = -5.0v collector-emitter saturation voltage v ce(sat) ? -0.2 -0.5 v i c = -10ma, i b = -1.0ma i c = -50ma, i b = -5.0ma base-emitter saturation voltage v be(sat) ? -1.0 v i c = -10ma, i b = -1.0ma i c = -50ma, i b = -5.0ma small signal characteristics output capacitance c obo ? 6.0 pf v cb = -10v, f = 1.0mhz, i e = 0 small signal current gain h fe 40 200 ? v ce = -10v, i c = -1.0ma, f = 1.0khz current gain-bandwidth product f t 100 300 mhz v ce = -10v, i c = -10ma, f = 100mhz noise figure nf ? 8.0 db v ce = -5.0v, i c = -200 a, r s = 10 , f = 1.0khz notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com /products/lead_free/index.php. 3. device mounted on fr-4 pcb, pad layout as shown on page 4 or in diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com /data sheets/ap02001.pdf . 4. measured under pulsed conditions. pulse width = 300ms. duty cycle 2 %.
ds31218 rev. 2 ? 2 2 of 4 www.diodes.com dzt5401 ? diodes incorporated 0 0.2 0.4 25 50 75 100 125 150 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 max power dissipation vs. ambient temperature a 0.6 0.8 1.0 0 0.00 0.05 0.10 0.15 0.20 0.25 012345678910 -v , collector-emitter voltage (v) ce -i , c o lle c t o r c u r r e n t (a) c fig. 2 typical collector current vs. collector-emitter voltage i = -2ma b i = -4ma b i = -6ma b i = -8ma b i = -10ma b 0 50 100 150 200 250 0 0.05 0.1 0.15 0.2 0.25 0.3 -i , collector current (a) c -v , c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) fig. 4 typical collector-emitter saturation voltage vs. collector current 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 1 -i , collector current (a) c -v , base-e m i t t e r t u r n - o n v o l t a g e (v) be(on) fig. 5 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 1 -i , collector current (a) c -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) fig. 6 typical base-emitter saturation voltage vs. collector current new product
ds31218 rev. 2 ? 2 3 of 4 www.diodes.com dzt5401 ? diodes incorporated 0 10 20 30 40 50 60 70 0.01 0.1 1 10 100 v , reverse voltage (v) r fig. 7 typical capacitance characteristics c obo c ibo f = 1mhz 0204060801 -i , collector current (ma) c f, 00 c u r r en t g ain-bandwid t h p r o d u c t (m h z) t fig. 8 typical gain-bandwidth product vs. collector current v = -10v f = 100mhz ce new product ordering information (note 5) device packaging shipping DZT5401-13 sot-223 2500/tape & reel notes: 5. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information y w w (top view) k4m = product type marking code = manufacturer?s code marking yww = date code marking y = last digit of year ex: 7 = 2007 ww = week code 01 - 52 package outline dimensions sot-223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3.50 e1 6.90 7.10 7.00 e ? ? 4.60 e1 ? ? 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm
ds31218 rev. 2 ? 2 4 of 4 www.diodes.com dzt5401 ? diodes incorporated suggested pad layout 3.3 2.3 1.2 1.6 1.6 6.4 (unit: mm) new product important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated.
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